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Studies of silicon pn junction solar cells
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Lindholm, F. A. |
| Copyright Year | 1975 |
| Description | Silicon pn junction solar cells made with low-resistivity substrates show poorer performance than traditional theory predicts. The purpose of this research was to identify and characterize the physical mechanisms responsible for the discrepancy. Attention was concentrated on the open circuit voltage in shallow junction cells of 0.1 ohm-cm substrate resistivity. A number of possible mechanisms that can occur in silicon devices were considered. Two mechanisms which are likely to be of main importance in explaining the observed low values of open-circuit voltage were found: (1) recombination losses associated with defects introduced during junction formation, and (2) inhomogeneity of defects and impurities across the area of the cell. To explore these theoretical anticipations, various diode test structures were designed and fabricated and measurement configurations for characterizing the defect properties and the areal inhomogeneity were constructed. |
| File Size | 1503788 |
| Page Count | 56 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19760006508 |
| Archival Resource Key | ark:/13960/t58d4pn7g |
| Language | English |
| Publisher Date | 1975-12-23 |
| Access Restriction | Open |
| Subject Keyword | Energy Production And Conversion Solar Cells Electric Potential Crystal Defects Impurities Recombination Reactions Inhomogeneity Silicon Junctions Power Efficiency Diodes P-n Junctions Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Technical Report |
