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A simple model of proton damage in gaas solar cells
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Walker, G. H. Outlaw, R. A. Wilson, J. W. |
| Copyright Year | 1982 |
| Description | A simple proton damage model for GaAs solar cells is derived and compared to experimental values of change in short circuit currents. The recombination cross section associated with the defects was determined from the experimental comparison to be approximately 1.2 x 10 to the -13th power sq cm in fair agreement with values determined from the deep level transient spectroscopy technique. |
| File Size | 832391 |
| Page Count | 18 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19820022831 |
| Archival Resource Key | ark:/13960/t0gv0f061 |
| Language | English |
| Publisher Date | 1982-06-01 |
| Access Restriction | Open |
| Subject Keyword | Energy Production And Conversion Solar Cells Transient Response Spectroscopy Electron Recombination Gallium Arsenides Point Defects Short Circuits Proton Damage Mathematical Models Electric Current Ionization Cross Sections Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Technical Report |
