Loading...
Please wait, while we are loading the content...
Similar Documents
Development of gaas solar cells (Document No: 19730002315)
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Copyright Year | 1972 |
| Description | Solar cells and mesa diodes were fabricated by the implantation of zinc or beryllium ions into n-type gallium arsenide. Annealing temperatures above 750 C (zinc) or 650 C (beryllium) were found to produce 50% to 100% activation of the implanted ions. Junction depths of about 0.4 micron were produced by 600 keV zinc implants or 70 keV beryllium implants. P-layer sheet resistance was about 150 ohms for 2 x 10 to the 15th power cm/2 zinc or 1 x 10 to the 15th power cm/2 beryllium implants. This is sufficiently low for efficient solar cell fabrication. Contacting procedures were improved to yield reproducibly adherent, low resistance front and back contacts. |
| File Size | 827377 |
| Page Count | 22 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19730002315 |
| Archival Resource Key | ark:/13960/t1gj4846f |
| Language | English |
| Publisher Date | 1972-07-31 |
| Access Restriction | Open |
| Subject Keyword | Auxiliary Systems Solar Cells Gallium Arsenides Additives Beryllium Junction Diodes Performance Zinc Ion Injection Ntrs Nasa Technical Reports ServerĀ (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Technical Report |