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Growth of single-crystal gallium nitride
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Copyright Year | 1970 |
| Description | Use of ultrahigh purity ammonia prevents oxygen contamination of GaN during growth, making it possible to grow the GaN at temperatures as high as 825 degrees C, at which point single crystal wafers are deposited on /0001/-oriented sapphire surfaces. |
| File Size | 62230 |
| Page Count | 1 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19700000456 |
| Archival Resource Key | ark:/13960/t0bw2770n |
| Language | English |
| Publisher Date | 1970-10-01 |
| Access Restriction | Open |
| Subject Keyword | Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Technical Report |