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| Content Provider | Directory of Open Access Journals (DOAJ) |
|---|---|
| Author | Shibo Wang Xinqiang Wang Zhaoying Chen Ping Wang Qi Qi Xiantong Zheng Bowen Sheng Huapeng Liu Tao Wang Xin Rong Mo Li Jian Zhang Xuelin Yang Fujun Xu Bo Shen |
| Abstract | It is a fact that surface electron accumulation layer with sheet electron density in the magnitude of ~1013 cm−2 on InN, either as-grown or Mg-doped, makes InN an excellent candidate for sensing application. In this paper, the response of hydrogen sensors based on Mg-doped InN films (InN:Mg) grown by molecular beam epitaxy has been investigated. The sensor exhibits a resistance variation ratio of 16.8% with response/recovery times of less than 2 min under exposure to 2000 ppm H2/air at 125 °C, which is 60% higher in the magnitude of response than the one based on the as-grown InN film. Hall-effect measurement shows that the InN:Mg with suitable Mg doping level exhibits larger sheet resistance, which accords with buried p-type conduction in the InN bulk. This work shows the advantage of InN:Mg and signifies its potential for sensing application. |
| e-ISSN | 14248220 |
| DOI | 10.3390/s18072065 |
| Journal | Sensors |
| Issue Number | 7 |
| Volume Number | 18 |
| Language | English |
| Publisher | MDPI AG |
| Publisher Date | 2018-06-01 |
| Publisher Place | Switzerland |
| Access Restriction | Open |
| Subject Keyword | Chemical Technology Inn Mg-doping Hydrogen Sensor |
| Content Type | Text |
| Resource Type | Article |
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