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Buried p-type layers in Mg-doped InN
| Content Provider | Semantic Scholar |
|---|---|
| Author | Anderson, Phillip A. Swartz, Craig H. Carder, Damian Reeves, Roger J. Durbin, Steven M. Chandril, Sandeep Myers, T. Harrison |
| Copyright Year | 2006 |
| Abstract | Variable magnetic field Hall effect, photoluminescence, and capacitance-voltage (CV) analysis have been used to study InN layers grown by plasma assisted molecular beam epitaxy. All three techniques reveal evidence of a buried p-type layer beneath a surface electron accumulation layer in heavily Mg-doped samples. Early indications suggest the Mg acceptor level in InN may lie near 110meV above the valence band maximum. The development of p-type doping techniques offers great promise for future InN based devices. |
| Starting Page | 184104 |
| Ending Page | 184104 |
| Page Count | 1 |
| File Format | PDF HTM / HTML |
| DOI | 10.1063/1.2378489 |
| Alternate Webpage(s) | http://projects.itn.pt/VDarakchieva/References_appl09/Ref22.pdf |
| Alternate Webpage(s) | https://doi.org/10.1063/1.2378489 |
| Volume Number | 89 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |