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Mg concentration profile and its control in the low temperature grown Mg-doped GaN epilayer
| Content Provider | Semantic Scholar |
|---|---|
| Author | Yang, Juanning Zhao, Degang Jiang, Dongwei Liang, Fushun Chen, Pengwan Liu, Zheng Liu, Wei Long Xing, Yao Zhang, Lin Wang, Wenjie Zhang, Yuewen Du, Guotong |
| Copyright Year | 2017 |
| Abstract | Abstract In this work, the Cp2Mg flux and growth pressure influence to Mg doping concentration and depth profiles is studied. From the SIMS measurement we found that a transition layer exists at the bottom region of the layer in which the Mg doping concentration changes gradually. The thickness of transition layer decreases with the increases of Mg doping concentration. Through analysis, we found that this is caused by Ga memory effect which the Ga atoms stay residual in MOCVD system will react with Mg source, leading a transition layer formation and improve the growth rate. And the Ga memory effect can be well suppressed by increasing Mg doping concentration and growth pressure and thus get a steep Mg doping at the bottom region of p type layer. |
| Starting Page | 690 |
| Ending Page | 695 |
| Page Count | 6 |
| File Format | PDF HTM / HTML |
| DOI | 10.1016/j.spmi.2017.11.057 |
| Volume Number | 113 |
| Alternate Webpage(s) | http://isiarticles.com/bundles/Article/pre/pdf/155432.pdf |
| Alternate Webpage(s) | https://doi.org/10.1016/j.spmi.2017.11.057 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
