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A Study on Al2O3 Deposition by Atomic Layer Deposition for III-Nitride Metal-Insulator-Semiconductor Field Effect Transistors
| Content Provider | CiteSeerX |
|---|---|
| Author | Lee, Yi-Che Kao, Tsung-Ting Shen, Shyh-Chiang |
| Abstract | We studied the impact of atomic layer deposition (ALD)-grown Al2O3 deposition conditions on AlGaN/GaN metal-insulator-semiconductor field-effect transistors (MISFETs) using a two-level fractional factorial design of experiments. Three responses, including the threshold voltage shift, the gate-to-source leakage current and I-V hysteresis are studied to understand the effects of each processing variable and interaction. An optimal recipe was then determined to achieve a drain-current hysteresis of less than 0.5V with a gate leakage current of less than 1pA/mm for AlGaN/GaN MISFETs on silicon substrates. The drain-to-source breakdown voltage is also greater than 170V, corresponding to lateral breakdown field of> 1.1 MV/cm. |
| File Format | |
| Access Restriction | Open |
| Subject Keyword | Algan Gan Metal-insulator-semiconductor Field-effect Transistor I-v Hysteresis Drain-to-source Breakdown Voltage Gate-to-source Leakage Threshold Voltage Shift Algan Gan Misfets Iii-nitride Metal-insulator-semiconductor Field Effect Transistor Lateral Breakdown Field Gate Leakage Mv Cm Two-level Fractional Factorial Design Al2o3 Deposition Silicon Substrate Optimal Recipe Drain-current Hysteresis Al2o3 Deposition Condition Atomic Layer Deposition |
| Content Type | Text |
