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Aegis: partitioning data block for efficient recovery of stuck-at-faults in phase change memory.
| Content Provider | CiteSeerX |
|---|---|
| Author | Fan, Jie Jiang, Song Shu, Jiwu Zhang, Youhui Zhen, Weimin |
| Abstract | While Phase Change Memory (PCM) holds a great promise as a complement or even replacement of DRAM-based memory and flash-based storage, it must effectively overcome its limit on write endurance to be a reliable device for an extended period of intensive use. The limited write endurance can lead to permanent stuck-at faults after a certain number of writes, which causes some memory cells permanently stuck at either ’0 ’ or ’1’. State-of-the-art solutions apply a bit inversion technique on selected bit groups of a data block after its partitioning. The effectiveness of this approach hinges on how a data block is partitioned into bit groups. While all existing solutions can separate faults into different groups for error correction, they are inadequate on three fundamental capabilities desired for any partition |
| File Format | |
| Access Restriction | Open |
| Subject Keyword | Phase Change Memory Partitioning Data Block Efficient Recovery Data Block Bit Group Memory Cell Different Group Flash-based Storage Write Endurance Limited Write Endurance Certain Number Bit Inversion Technique Error Correction Dram-based Memory Permanent Stuck-at Fault Intensive Use Reliable Device Extended Period Great Promise Fundamental Capability State-of-the-art Solution |
| Content Type | Text |
