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Nitrogen-polar core-shell GaN light-emitting diodes grown by selective area metalorganic vapor phase epitaxy
| Content Provider | Semantic Scholar |
|---|---|
| Author | Li, Shunfeng Wang, Xue Fündling, S. Erenburg, Milena Ledig, Johannes Wei, Jiandong Wehmann, Hergo H. Waag, A. Bergbauer, W. Mandl, Martin Straßburg, Martin Dr. Trampert, Achim Jahn, Uwe Riechert, Henning Jönen, H. Hangleiter, Andreas |
| Copyright Year | 2012 |
| Abstract | Homogeneous nitrogen-polar GaN core-shell light emitting diode (LED) arrays were fabricated by selective area growth on patterned substrates. Transmission electron microscopy measurements prove the core-shell structure of the rod LEDs. Depending on the growth facets, the InGaN/GaN multi-quantum wells (MQWs) show different dimensions and morphology. Cathodoluminescence (CL) measurements reveal a MQWs emission centered at about 415 nm on sidewalls and another emission at 460 nm from top surfaces. CL line scans on cleaved rod also indicate the core-shell morphology. Finally, an internal quantum efficiency of about 28% at room temperature was determined by an all-optical method on a LED array. |
| Starting Page | 032103 |
| Ending Page | 032103 |
| Page Count | 1 |
| File Format | PDF HTM / HTML |
| DOI | 10.1063/1.4737395 |
| Volume Number | 101 |
| Alternate Webpage(s) | http://www.pdi-berlin.de/fileadmin/rsync_intra4_www1/externe_Publikationen/2012/apl101sfl.pdf |
| Alternate Webpage(s) | https://doi.org/10.1063/1.4737395 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |