NDLI: Thermal Conductivity and Phonon Transport Properties of Silicon Using Perturbation Theory and the Environment-Dependent Interatomic Potential

Content Provider	The American Society of Mechanical Engineers (ASME) Digital Collection
Author	Pascual-Gutie´rrez, Jose´ A. Jayathi, Y. Murthy Viskanta, Raymond
Copyright Year	2009
Abstract	Perturbation theory is used to compute the strength of three-phonon and isotope scattering mechanisms in silicon using the Environment-Dependent Interatomic Potential (EDIP) without resorting to any parameter-fitting. A detailed methodology to accurately find three-phonon processes satisfying energy- and momentum-conservation rules is described. Bulk silicon thermal conductivity values are computed across a range of temperatures and shown to match experimental data well. It is found that about two-thirds of the heat transport in bulk silicon may be attributed to transverse acoustic modes. Effective relaxation times and mean free paths are computed in order to provide a more complete picture of the detailed transport mechanisms and for use with carrier transport models based on the Boltzmann transport equation.
Starting Page	1755
Ending Page	1767
Page Count	13
File Format	PDF
ISBN	9780791843826
DOI	10.1115/IMECE2009-12934
e-ISBN	9780791838631
Volume Number	Volume 9: Heat Transfer, Fluid Flows, and Thermal Systems, Parts A, B and C
Conference Proceedings	ASME 2009 International Mechanical Engineering Congress and Exposition
Language	English
Publisher Date	2009-11-13
Publisher Place	Lake Buena Vista, Florida, USA
Access Restriction	Subscribed
Subject Keyword	Perturbation theory Radiation scattering Relaxation (physics) Temperature Mean free path Scattering (physics) Phonons Momentum Acoustics Fittings Heat Electromagnetic scattering Thermal conductivity Silicon Isotopes
Content Type	Text
Resource Type	Article

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