NDLI: Investigation of Device Interactions Between Two MOSFETs in Si CMOS

Content Provider	The American Society of Mechanical Engineers (ASME) Digital Collection
Author	Hatakeyama, T. Fushinobu, K. Okazaki, K.
Copyright Year	2008
Abstract	Experimental works about the device interactions between nMOS and pMOS in bulk Si CMOS were performed. In the bulk Si CMOS, in the case that the distance between two MOSFETs is not enough, it is important to consider the risk of the device interactions between nMOS and pMOS. In this work, we fabricated bulk Si CMOS, in which the distance between pMOS and nMOS can be variable. And we observed the characteristics of the device operation by using fabricated CMOS under the dc bias condition. In this research, we focused on the leakage current between two MOSFETs in CMOS inverter depending on the distance between two MOSFETs, applied voltage and temperature. Experimental results showed that our fabricated CMOS shows quite small leakage current and the leakage current is less than 1% compared to CMOS on state current even with small distance between two MOSFETs at the high voltage condition and the high temperature condition.
Starting Page	197
Ending Page	203
Page Count	7
File Format	PDF
ISBN	9780791848678
DOI	10.1115/IMECE2008-67204
e-ISBN	9780791838402
Volume Number	Volume 6: Electronics and Photonics
Conference Proceedings	ASME 2008 International Mechanical Engineering Congress and Exposition
Language	English
Publisher Date	2008-10-31
Publisher Place	Boston, Massachusetts, USA
Access Restriction	Subscribed
Subject Keyword	Leakage Risk Temperature High temperature Complementary metal oxide semiconductors
Content Type	Text
Resource Type	Article

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