NDLI: Thermal Design for Probe Transformation of Phase Change Vias

Content Provider	The American Society of Mechanical Engineers (ASME) Digital Collection
Author	Lo, Hsinyi James, A. Bain
Copyright Year	2008
Abstract	Thermal cycling of chalcogenide materials (Ge2Sb2Te5 or GeSb for example) causes switching between two electrical resistance levels in the materials. This is the basis of PC memory, and offers the possibility of use for programmable signal switching in electronic systems as well. Here we propose a design for connection topology, using dual tip AFM-type probes. The design subdivides a single phase change via into a parallel array of three-terminal sub-vias which are well-suited to addressing with probes. This sub-division reduces required power and current to acceptable levels. Experimental inputs to the model were extracted from two sources. First, current levels were limited to levels that have previously been shown possible to deliver with AFM tips. Secondly, measurements of PC resistance as a function of cooling time were used to determine required heat sinking of the sub-via structures.
Starting Page	687
Ending Page	696
Page Count	10
File Format	PDF
ISBN	9780791848746
DOI	10.1115/IMECE2008-66441
e-ISBN	9780791838402
Volume Number	Volume 13: Nano-Manufacturing Technology; and Micro and Nano Systems, Parts A and B
Conference Proceedings	ASME 2008 International Mechanical Engineering Congress and Exposition
Language	English
Publisher Date	2008-10-31
Publisher Place	Boston, Massachusetts, USA
Access Restriction	Subscribed
Subject Keyword	Design Atomic force microscopy Heat Cooling Electronic systems Electrical resistance Signals Topology Probes
Content Type	Text
Resource Type	Article

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