NDLI: Tunnel diode storage using current sensing

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Tunnel diode storage using current sensing

Content Provider	ACM Digital Library
Author	Savitt, D. A. Whiteside, A. E. Beck, E. R.
Abstract	Tunnel diodes are attractive for use as the basic elements in high-speed random-access memories because of their fast switching speed and good environmental tolerance. A memory approach using tunnel diodes has been devised which is based upon destructive sensing of the operating current level in simple bistable elements. Each element consists of one tunnel diode and one resistor. This approach results in a near minimum of memory element complexity and of drive and bias power requirements. The immediate goal of the work reported is the development of a memory of somewhat over 1000 bits, able to operate from -55C to +125C at submicro-second cycle times. The feasibility of the overall memory concept, which is applicable to either bit or word organization, has been demonstrated by the operation of a test model. Test results indicate that a 200-ns cycle time is obtainable in a memory of 64 words of 24 bits each. Cycle time is roughly proportional to the square of the word capacity; correspondingly shorter cycle times can be obtained with memories of smaller capacity. With further circuit refinements it should be possible to operate a 64-word memory of this basic type at a cycle time of 100 ns or less over the temperature range of -55C to +125C.
Starting Page	427
Ending Page	442
Page Count	16
File Format	PDF
DOI	10.1145/1460690.1460741
Language	English
Publisher	Association for Computing Machinery (ACM)
Publisher Date	1961-05-09
Publisher Place	New York
Access Restriction	Subscribed
Content Type	Text
Resource Type	Article

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