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| Content Provider | ACM Digital Library |
|---|---|
| Author | Ouyang, Jin Xie, Yuan Zhan, Jia Zhao, Jishen Ge, Fen |
| Abstract | The diminishing momentum of Dennard scaling leads to the ever increasing power density of integrated circuits, and a decreasing portion of transistors on a chip that can be switched on simultaneously---a problem recently discovered and known as dark silicon. There has been innovative work to address the "dark silicon" problem in the fields of power-efficient core and cache system. However, dark silicon challenges with Network-on-Chip (NoC) are largely unexplored. To address this issue, we propose DimNoC, a "dim silicon" approach, which leverages drowsy SRAM and STT-RAM technologies to replace pure SRAM-based NoC buffers. Specifically, we propose two novel hybrid buffer architectures: 1) a Hierarchical Buffer (HB) architecture, which divides the input buffers into a hierarchy of levels with different memory technologies operating at various power states; 2) a Banked Buffer (BB) architecture, which organizes drowsy SRAM and STT-RAM into separate banks in order to hide the long write-latency of STT-RAM. Our experiments show that the proposed DimNoC can achieve 30.9% network energy saving, 20.3% energy-delay product (EDP) reduction, and 7.6% router area decrease compared with the baseline SRAM-based NoC design. |
| Starting Page | 1 |
| Ending Page | 6 |
| Page Count | 6 |
| File Format | |
| ISBN | 9781450335201 |
| DOI | 10.1145/2744769.2744824 |
| Language | English |
| Publisher | Association for Computing Machinery (ACM) |
| Publisher Date | 2015-06-07 |
| Publisher Place | New York |
| Access Restriction | Subscribed |
| Subject Keyword | Stt-ram Network-on-chip Dark silicon |
| Content Type | Text |
| Resource Type | Article |
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