NDLI: Non-volatile ferroelectric memory with position-addressable polymer semiconducting nanowire.

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Non-volatile ferroelectric memory with position-addressable polymer semiconducting nanowire.

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Non-volatile ferroelectric memory with position-addressable polymer semiconducting nanowire.

Content Provider	World Health Organization (WHO)-Global Index Medicus
Author	Hwang, Sun Kak Min, Sung-Yong Bae, Insung Cho, Suk Man Kim, Kang Lib Lee, Tae-Woo Park, Cheolmin
Description	Author Affiliation: Hwang SK ( Department of Materials Science and Engineering, Yonsei University, Seoul, 120-749, Republic of Korea.)
Abstract	One-dimensional nanowires (NWs) have been extensively examined for numerous potential nano-electronic device applications such as transistors, sensors, memories, and photodetectors. The ferroelectric-gate field effect transistors (Fe-FETs) with semiconducting NWs in particular in combination with ferroelectric polymers as gate insulating layers have attracted great attention because of their potential in high density memory integration. However, most of the devices still suffer from low yield of devices mainly due to the ill-control of the location of NWs on a substrate. NWs randomly deposited on a substrate from solution-dispersed droplet made it extremely difficult to fabricate arrays of NW Fe-FETs. Moreover, rigid inorganic NWs were rarely applicable for flexible non-volatile memories. Here, we present the NW Fe-FETs with position-addressable polymer semiconducting NWs. Polymer NWs precisely controlled in both location and number between source and drain electrode were achieved by direct electrohydrodynamic NW printing. The polymer NW Fe-FETs with a ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) exhibited non-volatile ON/OFF current margin at zero gate voltage of approximately 10(2) with time-dependent data retention and read/write endurance of more than 10(4) seconds and 10(2) cycles, respectively. Furthermore, our device showed characteristic bistable current hysteresis curves when being deformed with various bending radii and multiple bending cycles over 1000 times.
File Format	HTM / HTML
ISSN	16136810
Issue Number	10
Journal	Small
Volume Number	10
e-ISSN	16136829
Language	English
Publisher	Wiley-VCH
Publisher Date	2014-05-28
Publisher Place	Germany
Access Restriction	One Nation One Subscription (ONOS)
Content Type	Text
Resource Type	Article
Subject	Chemistry Nanoscience and Nanotechnology Medicine Biomaterials Engineering Biotechnology

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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