NDLI: Fabrication of a 1.7-kV Schottky barrier diode with improved forward current-voltage characteristics

Content Provider	Springer Nature Link
Author	Bahng, Wook Yang, Chang Heon Kang, In Ho Seok, Ogyun Moon, Jeong Hyun Na, Moon Kyong Park, Him Chan
Copyright Year	2016
Abstract	This paper presents the effects of thermal annealing performed at different temperatures on the forward current-voltage (I-V) characteristics to fabricate a 1.7-kV 4H-SiC Schottky barrier diode (SBD) with improved forward performances. To optimize the thermal annealing temperature, the SBDs were characterized by using precise low-current and high-current I-V measurements, a twodiode model analysis and grazing-incidence X-ray diffraction measurements. The results showed that a degradation in the ideality factor and a dramatic decrease in the turn-on resistance began at temperature above 550 °C. In particular, the turn-on resistance for the SBD annealed at 550 °C was reduced by 32% compared to that for the SBD without thermal annealing without any degradation in the Schottky barrier height. This was attributed to an expansion of Al crystallites caused by the thermal annealing.
Starting Page	810
Ending Page	814
Page Count	5
File Format	PDF
ISSN	03744884
Journal	Journal of the Korean Physical Society
Volume Number	68
Issue Number	6
e-ISSN	19768524
Language	English
Publisher	The Korean Physical Society
Publisher Date	2016-04-12
Publisher Place	Seoul
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Theoretical, Mathematical and Computational Physics 4H-SiC Schottky barrier diode Thermal annealing Forward I-V improvement Physics Particle and Nuclear Physics
Content Type	Text
Resource Type	Article
Subject	Physics and Astronomy

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