NDLI: Impact of the silicon-nitride passivation film thickness on the characteristics of InAlAs/InGaAs InP-based HEMTs

Content Provider	Springer Nature Link
Author	Ding, Peng Li, Xin Jian Zhong, Ying Hui Yang, Jie Jin, Zhi
Copyright Year	2015
Abstract	In this research, the DC and RF characteristics for our own InAlAs/InGaAs InP-based high-electron-mobility transistors (HEMTs) with 0-nm, 50-nm, and 200-nm silicon-nitride (Si$_{3}$N$_{4}$) passivation films have been investigated comprehensively and systematically. With increasing Si$_{3}$N$_{4}$ passivation film thickness, the device exhibits an apparent improvement in the output conductance and a distinct drift of the pinch-off voltage toward a positive value. Especially, the device passivated by using a 50-nm Si$_{3}$N$_{4}$ film demonstrates the highest extrinsic transconductance and channel current. The appeared changes of the DC properties can be interpreted as due to the passivationinduced positively-charged surface state increasing the sheet carrier density with the carrier mobility and parasitic resistance of device being deteriorated by long-time high-stress-intensity ion bombardment. Additionally, the degradations of the current-gain cutoff frequency (f $_{T}$) and maximum oscillation frequency (f $_{max}$) can be attributed to the drastically-increased parasitic capacitance and resistance induced by the passivation process. This work will be of great importance in fabricating InP HEMTs with high performances.
Starting Page	1020
Ending Page	1024
Page Count	5
File Format	PDF
ISSN	03744884
Journal	Journal of the Korean Physical Society
Volume Number	66
Issue Number	6
e-ISSN	19768524
Language	English
Publisher	The Korean Physical Society
Publisher Date	2015-04-16
Publisher Place	Seoul
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	HEMT Theoretical, Mathematical and Computational Physics InP f $_{T}$ Physics Particle and Nuclear Physics Passivation f $_{max}$
Content Type	Text
Resource Type	Article
Subject	Physics and Astronomy

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