NDLI: Epitaxial Optimization of 130-nm Gate-Length InGaAs/InAlAs/InP HEMTs for Low-Noise Applications

Content Provider	IEEE Xplore Digital Library
Author	Malmkvist, M. Shumin Wang Grahn, J.
Copyright Year	1963
Abstract	The epitaxial structure of 130- nm gate-length InGaAs/InAlAs/InP high electron mobility transistors (HEMTs) has been studied in order to optimize the device performance when biased under low-noise conditions. Three essential epitaxial parameters have been varied: the In channel content ([In]: 53%, 70%, and 80%), the delta-doping concentration (delta: 3, 5, and 7 times 10¹² cm^-2), and the Schottky layer thickness (d_SL: 9,11, and 13 nm). All HEMTs exhibited low gate-leakage current I_G below 1 muA/mm at a low-noise bias, except d_SL = 9 nm due to a too thin Schottky layer thickness. It was verified that the lowest noise figure NF was achieved when the square root of the drain-to-source current I_DS over transconductance g_m exhibited a minimum. A clear optimum for both d_Sl and delta was observed with respect to minimum noise figure NF_min. Increasing [In] only provided a slight reduction in N-F_min. In contrast, the RF performance was much more affected by increasing [In]. The lowest NF_min was achieved with a delta doping of 5 times 10¹² cm² and a d_SL of 11 nm.
Sponsorship	IEEE Electron Devices Society
Starting Page	126
Ending Page	131
Page Count	6
File Size	311927
File Format	PDF
ISSN	00189383
Volume Number	56
Issue Number	1
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Noise measurement MODFETs HEMTs Indium phosphide Noise Logic gates Epitaxial growth $\delta$ doping High electron mobility transistor (HEMT) In channel content InGaAs/InAlAs/InP low noise optimization Schottky layer
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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