NDLI: In-plane dielectric properties of epitaxial orthorhombic HoMnO$_{3}$ films grown on LaAlO$

Content Provider	Springer Nature Link
Author	Wang, Weitian Gao, Ping Zhang, Wei Sun, Yuming
Copyright Year	2013
Abstract	Orthorhombic HoMnO$_{3}$ thin films were grown epitaxially on LaAlO$_{3}$ (001) substrates by using a pulsed laser deposition technique. The films showed perfectly orthorhombic crystallization and were well-aligned with the substrates. The in-plane dielectric constant and the dielectric loss of HoMnO$_{3}$ films were measured as functions of temperature (80 ∼ 300 K) and frequency (120 ∼ 100 kHz) by using interdigital surface electrodes. Two thermally-activated dielectric relaxations were found, and the respective peaks shifted to higher temperatures as the measuring frequency was increased. The in-plane dielectric properties of epitaxial orthorhombic HoMnO$_{3}$ films were considered to have a universal dielectric response behavior, and the dipoar effects and the hopping conductivity induced by the charge carriers were used to explain the results. The dielectric properties at low temperatures, which showed the multiferroicity, of the orthorhombic HoMnO$_{3}$ films are discussed.
Starting Page	1799
Ending Page	1803
Page Count	5
File Format	PDF
ISSN	03744884
Journal	Journal of the Korean Physical Society
Volume Number	63
Issue Number	9
e-ISSN	19768524
Language	English
Publisher	Springer Netherlands
Publisher Date	2013-11-23
Publisher Place	Dordrecht
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Dielectric properties Interdigital electrodes Theoretical, Mathematical and Computational Physics HoMnO$_{3}$ thin films Orthorhombic Physics Particle and Nuclear Physics
Content Type	Text
Resource Type	Article
Subject	Physics and Astronomy

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