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Triboelectric charge generation by semiconducting SnO$_{2}$ film grown by atomic layer deposition

Content Provider	Springer Nature Link
Author	Lee, Ho Yoon, Seong Yu Kim, Dong Ha Kim, Seong Keun Choi, Byung Joon
Copyright Year	2017
Abstract	Improving the energy harvesting efficiency of triboelectric generators (TEGs) requires exploring new types of materials that can be used, and understanding their properties. In this study, we have investigated semiconducting SnO$_{2}$ thin films as friction layers in TEGs, which has not been explored thus far. Thin films of SnO$_{2}$ with various thicknesses were grown by atomic layer deposition on Si substrates. Either polymer or glass was used as counter friction layers. Vertical contact/separation mode was utilized to evaluate the TEG efficiency. The results indicate that an increase in the SnO$_{2}$ film thickness from 5 to 25 nm enhances the triboelectric output voltage of the TEG. Insertion of a 400-nm-thick Pt sub-layer between the SnO$_{2}$ film and Si substrate further increased the output voltage up to ~120 V in a 2 cm × 2 cm contact area, while the enhancement was cancelled out by inserting a 10-nm-thick insulating Al$_{2}$O$_{3}$ film between SnO$_{2}$ and Pt films. These results indicate that n-type semiconducting SnO$_{2}$ films can provide triboelectric charge to counter-friction layers in TEGs.
Starting Page	318
Ending Page	323
Page Count	6
File Format	PDF
ISSN	17388090
Journal	Electronic Materials Letters
Volume Number	13
Issue Number	4
e-ISSN	20936788
Language	English
Publisher	The Korean Institute of Metals and Materials
Publisher Date	2017-04-20
Publisher Place	Seoul
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	triboelectric generator semiconductor SnO$_{2}$ sub-layer Optical and Electronic Materials Condensed Matter Physics Nanotechnology and Microengineering Characterization and Evaluation of Materials Nanotechnology
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials

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