NDLI: High efficiency n-Si/p-Cu$_{2}$O core-shell nanowires photodiode prepared by atomic layer deposition of Cu$

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High efficiency n-Si/p-Cu$_{2}$O core-shell nanowires photodiode prepared by atomic layer deposition of Cu$_{2}$O on well-ordered Si nanowires array

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High efficiency n-Si/p-Cu$_{2}$O core-shell nanowires photodiode prepared by atomic layer deposition of Cu$_{2}$O on well-ordered Si nanowires array

Content Provider	Springer Nature Link
Author	Kim, Hangil Kim, Soo Hyun Ko, Kyung Yong Kim, Hyungjun Kim, Jaehoon Oh, Jihun Lee, Han Bo Ram
Copyright Year	2016
Abstract	A highly efficient n-Si/p-Cu$_{2}$O core-shell (C-S) nanowire (NW) photodiode was fabricated using Cu$_{2}$O grown by atomic layer deposition (ALD) on a well-ordered Si NW array. Ordered Si nanowires arrays were fabricated by nano-sphere lithography to pattern metal catalysts for the metal-assisted etching of silicon, resulting in a Si NW arrays with a good arrangement, smooth surface and small diameter distribution. The ALD-Cu$_{2}$O thin films were grown using a new non-fluorinated Cu precursor, bis(1-dimethylamino-2-methyl-2-butoxy)copper (C$_{14}$H$_{32}$N$_{2}$O$_{2}$Cu), and water vapor (H$_{2}$O) at 140°C. Transmission electron microscopy equipped with an energy dispersive spectrometer confirmed that p-Cu$_{2}$O thin films had been coated over arrayed Si NWs with a diameter of 150 nm (aspect ratio of ∼7.6). The C-S NW photodiode exhibited more sensitive photodetection performance under ultraviolet illumination as well as an enhanced photocurrent density in the forward biasing region than the planar structure diode. The superior performance of C-S NWs photodiode was explained by the lower reflectance of light and the effective carrier separation and collection originating from the C-S NWs structure.
Starting Page	404
Ending Page	410
Page Count	7
File Format	PDF
ISSN	17388090
Journal	Electronic Materials Letters
Volume Number	12
Issue Number	3
e-ISSN	20936788
Language	English
Publisher	The Korean Institute of Metals and Materials
Publisher Date	2016-05-10
Publisher Place	Seoul
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Si nanowires atomic layer deposition Si/Cu$_{2}$O heterojunction photodiode Optical and Electronic Materials Condensed Matter Physics Nanotechnology and Microengineering Characterization and Evaluation of Materials Nanotechnology
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials

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