NDLI: Effects of growth temperature on μc-Si:H films prepared by plasma assistant magnetron sputtering

Content Provider	Springer Nature Link
Author	Su, Yuanjun Dond, Chuang Zhu, Ming Xu, Jun Fan, Penghui
Copyright Year	2012
Abstract	Hydrogenated microcrystalline silicon thin films (μc-Si:H) were deposited by plasma assistant magnetron sputtering in Ar-H$_{2}$ gas mixture. The effects of growth temperature from 150 to 450 °C on properties of deposited Si films were investigated at two different hydrogen diluted gases with [H$_{2}$]/([Ar]+[H$_{2}$]) of 10% and 50% at 3 Pa. The crystallinity of Si films examined by Raman scattering exhibited higher degradation by lowering growth temperature from 250 to 150 °C in low hydrogen diluted gas of 10% than that in high hydrogen diluted gas of 50%. The IR absorption band around 845 and 890 cm$^{−1}$ as well as calculated concentration of bonded hydrogen showed more obvious decrease of samples deposited in low hydrogen diluted gas of 10% than that in high hydrogen diluted gas of 50%. The optical band gasps of both groups of samples measured by ultraviolet-visible optical absorption were decreased with increasing temperature in both gas conditions.
Starting Page	193
Ending Page	197
Page Count	5
File Format	PDF
ISSN	10010521
Journal	Rare Metals
Volume Number	31
Issue Number	2
e-ISSN	18677185
Language	English
Publisher	Nonferrous Metals Society of China
Publisher Date	2012-03-30
Publisher Place	Springer Berlin Heidelberg
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	microcrystalline silicon Raman scattering hydrogen-silicon bonding optical band gap Inorganic Chemistry Surfaces and Interfaces, Thin Films Physical Chemistry Nanotechnology Metallic Materials Ceramics, Glass, Composites, Natural Methods
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Metals and Alloys Physical and Theoretical Chemistry Condensed Matter Physics

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