NDLI: Vapor transport growth of MoS$_{2}$ nucleated on SiO$

Content Provider	Springer Nature Link
Author	Stoica, Toma Stoica, Mihai Duchamp, Martial Tiedemann, Andreas Mantl, Siegfried Grützmacher, Detlev Buca, Dan Kardynał, Beata E.
Copyright Year	2016
Abstract	Vapor transport growth of atomically thin MoS$_{2}$ layers on patterned substrates is investigated, as it is a step towards the self-aligned growth and formation of heterojunctions, which could be useful in future applications. Enhanced formation of MoS$_{2}$ flakes at the pattern edges is observed on both the substrates examined, namely, patterned thermal SiO$_{2}$ on Si(100) and graphene flakes on SiO$_{2}$. The diffusion driven growth leads to the formation of MoS$_{2}$ monolayers (MLs) with sizes of tens of micrometers around the edges of SiO$_{2}$ patterns. The growth mode and the optical quality of the MoS$_{2}$ flakes can be controlled by varying the substrate temperature. Besides the lateral growth, 3R-type pyramids are obtained on prolonging the growth. Lateral MoS$_{2}$-graphene heterostructures are obtained by using graphene flakes on SiO$_{2}$ as a substrate.
Starting Page	3504
Ending Page	3514
Page Count	11
File Format	PDF
ISSN	19980124
Journal	Nano Research
Volume Number	9
Issue Number	11
e-ISSN	19980000
Language	English
Publisher	Tsinghua University Press
Publisher Date	2016-08-30
Publisher Place	Beijing
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	MoS$_{2}$ localized nucleation and growth graphene two-dimensional (2D) heterostructures Nanotechnology Materials Science Atomic/Molecular Structure and Spectra Condensed Matter Physics Biotechnology Biomedicine
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology Atomic and Molecular Physics, and Optics Condensed Matter Physics Electrical and Electronic Engineering

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