NDLI: Effect of conditioner load on the polishing pad surface during chemical mechanical planarization process

Content Provider	Springer Nature Link
Author	Shin, Cheolmin Qin, Hongyi Hong, Seokjun Jeon, Sanghyuk Kulkarni, Atul Kim, Taesung
Copyright Year	2016
Abstract	During the Chemical mechanical planarization (CMP), the pad conditioning process can affect the pad surface characteristics. Among many CMP process parameters, the improper applied load on the conditioner arm may have adverse effects on the polyurethane pad. In this work, we evaluated the pad surface properties under the various conditioner arm applied during pad conditioning process. The conditioning pads were evaluated for surface topography, surface roughness parameters such as Rt and Rvk and Material removal rate (MRR) and within-wafer non-uniformity after wafer polishing. We observed that, the pad asperities were collapsed in the direction of conditioner rotation and blocks the pad pores applied conditioner load. The Rvk value and MRR were founded to be in relation with 4 > 1 > 7 kgF conditioner load. Hence, this study shows that, 4 kgF applied load by conditioner is most suitable for the pad conditioning during CMP.
Starting Page	5659
Ending Page	5665
Page Count	7
File Format	PDF
ISSN	1738494X
Journal	Journal of Mechanical Science and Technology
Volume Number	30
Issue Number	12
e-ISSN	19763824
Language	English
Publisher	Korean Society of Mechanical Engineers
Publisher Date	2016-12-15
Publisher Place	Seoul
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Chemical mechanical planarization Diamond conditioner Material removal rate Pad surface Pad topography Within-wafer non-uniformity Mechanical Engineering Vibration, Dynamical Systems, Control Industrial and Production Engineering
Content Type	Text
Resource Type	Article
Subject	Mechanics of Materials Mechanical Engineering

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