NDLI: A stochastic model for the effects of pad surface topography evolution on material removal rate decay in chemical-mechanical planarization

Content Provider	IEEE Xplore Digital Library
Author	Changxue Wang Sherman, P. Chandra, A.
Copyright Year	1988
Abstract	The role of stochastic variations in pad surface topography evolution during a chemical-mechanical planarization or polishing (CMP) process is investigated. The roughness of the pad surface is considered, while the blanket film wafer is smooth and flat. The material removal rate (MRR) for CMP is modeled utilizing elastic as well as inelastic contact between the wafer and pad. Evolution of the pad surface topography is observed to have a significant influence on the MRR variations. A distinguishing feature of this paper is the MRR evolution equation for a single asperity. It is observed that an elastic contact model significantly underestimates the experimental trend. The selection of the initial probability density function (pdf) used in an MRR time-evolution model is shown to be a key issue. It is observed that reasonably small changes in numerical estimates of pdf parameters can have a significant effect on the accuracy of material removal model predictions. By extending the model to the case of inelastic contact between the wafer and pad asperities, it is found that model performance can be notably improved. Finally, it should be mentioned that the emphasis here on statistical elements, combined with the approach of developing mean MRR models based on models for individual asperities, allows one to easily incorporate more realistic model assumptions, an example being that pad asperities have tip curvatures and spacing that are random.
Sponsorship	IEEE Electron Devices Society IEEE Components, Packaging, and Manufacturing Technology Society IEEE Reliability Society IEEE Solid-State Circuits Society
Starting Page	695
Ending Page	708
Page Count	14
File Size	917382
File Format	PDF
ISSN	08946507
Volume Number	18
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-11-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Planarization Stochastic processes Semiconductor device modeling Surface topography Rough surfaces Surface roughness Chemical processes Equations Probability density function Parameter estimation Pearson probability density function (pdf) Chemical–mechanical planarization or polishing (CMP) elastic and inelastic contact material removal rate (MRR) decay pad surface topography evolution
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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