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Papers presented at the “International conference on fatigue and fracture of glasses, ceramics and composites”, materials research society of India, Kolkata, September 1999 : Foreword

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A detailed model for defect concentration and dopant activation in GaAs

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Bulletin of Materials Science : Volume 24, Issue 1, February 2001

Bulletin of Materials Science : Volume 24, Issue 6, January 2001

Bulletin of Materials Science : Volume 23

Bulletin of Materials Science : Volume 22

Bulletin of Materials Science : Volume 21

Bulletin of Materials Science : Volume 20

A detailed model for defect concentration and dopant activation in GaAs

Content Provider	Springer Nature Link
Author	Lakshminarayana, N.
Copyright Year	2001
Abstract	Defects in semi-insulating (SI) GaAs are especially critical in determining the properties of devices in which dopants are introduced by ion-implantation. The defects in GaAs are native to the material and their concentrations are subsequently modified after ion-implantation and annealing. In this work, we have extended the existing models in the literature by incorporating a large set of defects and using the most recent values for formation energies of these defects. The model includes eight types of point defects, the vacancy of Ga and As, their antisites and interstitials of Ga and As on both sub-lattices, along with carbon related defects always present in SI-GaAs. We have also included Si and related defects when this element is implanted as ann-type dopant. All these defects are considered in several charge states allowed by their stability conditions. The model assumes thermodynamic equilibrium between the point defects at an anneal temperature. Then the GaAs wafer is quenched so that the number of defects remain the same as those at the anneal temperature, but redistribution of charges occurs in various charge states. We find that the defect concentrations are extremely sensitive to the crystal stoichiometry, and good agreement with experimental data is shown. However, when we calculate the dopant activation in implanted GaAs, the quantitative agreement with experiments is not adequate. This discrepancy is explained on the basis of available formation energies for the defects.
Starting Page	225
Ending Page	229
Page Count	5
File Format	PDF
ISSN	02504707
Journal	Bulletin of Materials Science
Volume Number	24
Issue Number	2
e-ISSN	09737669
Language	English
Publisher	Springer-Verlag
Publisher Date	2001-01-01
Publisher Institution	Indian Academy of Sciences
Publisher Place	New York
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Semi-insulating GaAs dopant activation defects Materials Science Engineering
Content Type	Text
Resource Type	Article
Subject	Mechanics of Materials Materials Science

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Variations in first principles calculated defect energies in GaAs and their effect on practical predictions

Antilocalization effect on photo-generated carriers in semi-insulating GaAs sample

Etching of GaAs substrates to create As-rich surface

Filamentary injection currents in semi-insulating GaAs

Circuit Analysis of Photosensitive Capacitance in Semi-Insulating GaAs

Thermally stimulated currents in semi-insulating GaAs Schottky diodes and their simulation

Characterization of deep centers in undoped semi-insulating GaAs substrates by normalized thermally stimulated current spectroscopy: Comparison of 100 and 150 mm wafers

Dislocations as the origin of threshold voltage scatterings for GaAs MESFET on LEC-grown semi-insulating GaAs substrate

Growth of high-purity semi-insulating bulk GaAs for integrated-circuit applications

A detailed model for defect concentration and dopant activation in GaAs

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