NDLI: Investigation of silicon doped by zinc ions with a large dose

Content Provider	Springer Nature Link
Author	Privezentsev, V. V. Tabachkova, N. Yu. Eidelman, K. B. Ksenich, S. V.
Copyright Year	2016
Abstract	The formation of nanoparticles in СZn-Si(100) implanted with $^{64}$Zn$^{+}$ ions using a dose of 5 × 10$^{16}$ cm$^{–2}$ and an energy of 50 keV at room temperature with subsequent thermal processing in oxygen at temperatures ranging from 400 to 900°C is studied. The surface topology is investigated with scanning electron (in the secondary emission mode) and atomic force microscopes. The structure and composition of the near-surface silicon layer are examined using a high-resolution transmission electronic microscope fitted with a device for energy dispersive microanalysis. An amorphized near-surface Si layer up to 130 nm thick forms when zinc is implanted. Amorphous zinc nanoparticles with an average size of 4 nm are observed in this layer. A damaged silicon layer 50 nm thick also forms due to radiation defects. The metallic zinc phase is found in the sample after low-temperature annealing in the range of 400–600°C. When the annealing temperature is raised to 700°C, zinc oxide ZnO phase can form in the near-surface layer. The complex ZnO · Zn$_{2}$SiO$_{4}$ phase presumably emerges at temperatures of 800°C or higher, and zinc-containing nanoparticles with lateral sizes of 20–50 nm form on the sample’s surface.
Starting Page	1421
Ending Page	1426
Page Count	6
File Format	PDF
ISSN	10628738
Journal	Bulletin of the Russian Academy of Sciences: Physics
Volume Number	80
Issue Number	12
e-ISSN	19349432
Language	English
Publisher	Allerton Press
Publisher Date	2017-01-06
Publisher Place	New York
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Nuclear Physics, Heavy Ions, Hadrons
Content Type	Text
Resource Type	Article
Subject	Physics and Astronomy

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