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  1. Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques
  2. Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques : Volume 1
  3. Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques : Volume 1, Issue 3, June 2007
  4. Features of the formation of thermal donors in silicon under elastic tensile stress
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Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques : Volume 11
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques : Volume 10
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques : Volume 9
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques : Volume 8
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques : Volume 7
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques : Volume 6
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques : Volume 5
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques : Volume 4
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques : Volume 3
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques : Volume 2
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques : Volume 1
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques : Volume 1, Issue 6, December 2007
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques : Volume 1, Issue 5, October 2007
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques : Volume 1, Issue 4, August 2007
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques : Volume 1, Issue 3, June 2007
X-ray intensity distribution in the image plane of elliptic multilayer mirrors
Diffraction reflection of x-ray radiation with a two-dimensionally bounded wavefront from perfect crystals
Role of the dislocation screw component in the formation of the dislocation structure in Ge- and Si-based semiconductor heterosystems
X-ray study of structural features of GaSb(Si) single crystals grown using a set of diffraction methods under various heat and mass transfer conditions
X-ray topography study of microsegregation in crystals
X-ray spherical wave scattering patterns of the epitaxial Si/GeSi/Si (001) heterosystem
TEM study of the structure of gallium nitride epitaxial films grown on substrates with different interface morphologies
Simulation of the spatial structure of x-ray beams under conditions of the correction of the heat flow incident on a crystal
Wavelet processing of topographic high dynamic range images
Computer study of the temperature dependence of physical properties of noncrystalline silicon nanoparticles
Features of the formation of thermal donors in silicon under elastic tensile stress
Microanalysis station at the Kurchatov synchrotron radiation source
New type of regular carbon nanostructures: Nanocones on the surfaces of carbon-silicon (a-C:H) composite films
Fabrication of x-ray masks on a thick substrate for deep x-ray lithography
Study of the process of PbS nanocrystal formation in lead stearate and behenate Langmuir-Blodgett films by electron diffraction and x-ray reflectometry
Structure and radiation properties of dislocations arising during oxygen precipitate growth in silicon
Effect of surface excitations on the reflection electron energy loss spectrum in silicon
Sputtering of boron nitride single crystals of different structure
Mass spectrometry study of the kinetics of CdTe molecular-beam epitaxy: Part I. Cd, Te$_{2}$, and CdTe
Simulation of the MFM contrast from small low-coercive ferromagnetic nanoparticles in an external field
Magnetic force microscopy of GaAs:Mn ferromagnetic semiconductors
Nanocrystalline Ni-Mn solid solutions: New materials with competing exchange interaction
Off-plane grazing-incidence blazed grating with radial grooves as an efficient spectral purity filter for EUV lithography
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques : Volume 1, Issue 2, April 2007
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques : Volume 1, Issue 1, February 2007

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Features of the formation of thermal donors in silicon under elastic tensile stress

Content Provider Springer Nature Link
Author vak, I. I. Oganesyan, G. A.
Copyright Year 2007
Abstract The formation process of electrically active oxygen-containing complexes (thermal donors) in silicon is investigated at the initial stage of thermal treatment at T < 500°C under elastic tensile stress σ = 1 GPa. It is shown that, under these conditions, the formation of singly charged donor centers is observed in silicon when the oxygen concentration is (3–5) × 10$^{17}$ cm$^{−3}$. When the oxygen concentration is 9 × 10$^{17}$ cm$^{−3}$, doubly charged donor centers form. The depth profile of thermal donors is found in the samples studied.
Starting Page 294
Ending Page 297
Page Count 4
File Format PDF
ISSN 10274510
Journal Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques
Volume Number 1
Issue Number 3
e-ISSN 18197094
Language English
Publisher Nauka/Interperiodica
Publisher Date 2007-01-01
Publisher Place Moscow
Access Restriction One Nation One Subscription (ONOS)
Subject Keyword Surfaces and Interfaces, Thin Films
Content Type Text
Resource Type Article
Subject Nanoscience and Nanotechnology Surfaces, Coatings and Films
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