NDLI: Atomic and electronic structure of amorphous and nanocrystalline layers of semi-insulating silicon produced by chemical-vapor deposition at low pressures

Content Provider	Springer Nature Link
Author	Domashevskaya, E. P. Terekhov, V. A. Turishchev, S. Yu. Prijimov, A. S. Kharin, A. N. Pariva, E. V. Rumyantseva, N. A. Usoltseva, D. S. Fomenko, Yu. L. Belenko, S. V.
Copyright Year	2015
Abstract	Semi-insulating silicon SIPOS layers are prepared on single-crystal silicon substrates of two orientations Si (111) and Si (100) by chemical-vapor deposition at a reduced pressure in a horizontal hot-wall reactor at a temperature of 638°C and pressure of P = 20 Pa with a silane flow rate of 8 L/h and the addition of nitrous oxide into the reactor environment. Electronic-structure and phase-composition investigations by ultrasoft X-ray emission spectroscopy (USXES) and X-ray diffraction (XRD) methods show that the addition of nitrous-oxide gas into the reactor environment results in the formation of amorphous silicon layers. The layer-by-layer-phase analysis via USXES of the SIPOS samples to a depth of 120 nm without destruction indicates the predominance of oxide phases in the sample surface layers with a thickness of about 10 nm. The general content of unbound and bound oxygen of less than about 10%, below which nanocrystalline silicon is formed with an average particle size of 60–70 nm, can be considered as some conditional crystallization threshold of SIPOS amorphous layers.
Starting Page	1228
Ending Page	1236
Page Count	9
File Format	PDF
ISSN	10274510
Journal	Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques
Volume Number	9
Issue Number	6
e-ISSN	18197094
Language	English
Publisher	Pleiades Publishing
Publisher Date	2015-12-06
Publisher Place	Moscow
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	ultrasoft X-ray emission spectroscopy amorphous and nanocrystalline silicon layers atomic and electronic structure low pressure chemical-vapor deposition Surfaces and Interfaces, Thin Films
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology Surfaces, Coatings and Films

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Structure of Al$_{2}$O$_{3}$ thin layers synthesized on the silicon surface by atomic layer deposition

Synchrotron investigations of electronic and atomic-structure peculiarities for silicon-oxide films’ surface layers containing silicon nanocrystals

Structure of thin-film nickel-carbon composites formed by microwave plasma-enhanced chemical vapor deposition

Investigation of BiFeO$_{3}$ Multiferroic thin films prepared by metalloorganic chemical vapor deposition

Features of the growth of amorphous silicon thin films synthesized by magnetron sputtering

Light scattering in nanocrystalline silicon-carbide (nc-SiC) films

Structure and properties of nanocrystalline ZnS and ZnSe films

Electron microscopy studies of crystallites in carbon nanopillars grown by low-temperature plasma-enhanced chemical-vapor deposition

Raman spectroscopy of amorphous silicon subjected to laser annealing

Atomic and electronic structure of amorphous and nanocrystalline layers of semi-insulating silicon produced by chemical-vapor deposition at low pressures

Similar Documents

Structure of Al$_{2}$O$_{3}$ thin layers synthesized on the silicon surface by atomic layer deposition

Synchrotron investigations of electronic and atomic-structure peculiarities for silicon-oxide films’ surface layers containing silicon nanocrystals

Structure of thin-film nickel-carbon composites formed by microwave plasma-enhanced chemical vapor deposition

Investigation of BiFeO$_{3}$ Multiferroic thin films prepared by metalloorganic chemical vapor deposition

Features of the growth of amorphous silicon thin films synthesized by magnetron sputtering

Light scattering in nanocrystalline silicon-carbide (nc-SiC) films

Structure and properties of nanocrystalline ZnS and ZnSe films

Electron microscopy studies of crystallites in carbon nanopillars grown by low-temperature plasma-enhanced chemical-vapor deposition

Raman spectroscopy of amorphous silicon subjected to laser annealing

Atomic and electronic structure of amorphous and nanocrystalline layers of semi-insulating silicon produced by chemical-vapor deposition at low pressures