NDLI: Thin Film Transistors Using Wafer-Scale Low-Temperature MOCVD WSe$

Content Provider	Springer Nature Link
Author	Gong, Yiyang Zhang, Xiaotian Redwing, Joan M. Jackson, Thomas N.
Copyright Year	2016
Abstract	We report on thin film transistors using continuous WSe$_{2}$ thin films synthesized by metal organic chemical vapor deposition at 400°C. O$_{2}$ plasma etching is used to provide precise thickness modification of the WSe$_{2}$ thin film with an etch rate ∼0.25 nm/min. Device performance is found to vary with the thickness of the WSe$_{2}$ films. P-channel thin film transistors with plasma-thinned 3 nm WSe$_{2}$ channels have mobility ∼0.01 cm$^{2}$/Vs and current on–off ratio greater than 10$^{4}$. Our results suggest that plasma etching may provide an approach for post-growth modification of the electrical properties of two-dimensional transition metal dichalcogenide thin films.
Starting Page	6280
Ending Page	6284
Page Count	5
File Format	PDF
ISSN	03615235
Journal	Journal of Electronic Materials
Volume Number	45
Issue Number	12
e-ISSN	1543186X
Language	English
Publisher	Springer US
Publisher Date	2016-10-20
Publisher Place	New York
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Transition metal dichalcogenide tungsten diselenide MOCVD CVD thin film transistor field effect transistor wafer-scale low temperature Optical and Electronic Materials Characterization and Evaluation of Materials Electronics and Microelectronics, Instrumentation Solid State Physics
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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