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| Content Provider | Springer Nature Link |
|---|---|
| Author | Lin, Y. L. Luo, W. C. Lin, Y. H. Ho, C. E. Kao, C. R. |
| Copyright Year | 2004 |
| Abstract | The effects of Au thickness on the flip-chip solder joints with Cu/Ni/Al underbump metallurgy (UBM) on one end and the Au/Ni surface finish on another was studied. Two different thicknesses, 0.1 µm and 0.65 µm, were used for the surface finish. After assembly, the joints were subjected to thermal aging at 150°C. The difference in Au thickness had a strong effect on the consumption rate of the Ni layer in the UBM as well as on the failure mode of the solder joints. When the Au layer was thin (0.1 µm), the dissolved Cu from the Cu/Ni UBM was able to inhibit the formation of AuSn$_{4}$. When the Au layer was thick (0.65 µm), the dissolved Cu was not able to inhibit the formation of AuSn$_{4}$. These AuSn$_{4}$ enhanced the Ni consumption rate of the UBM. The presence of a large amount of AuSn$_{4}$ inside the solder also weakened the solder because of the Au embrittlement effect. In view of these observations, the gold thickness on the Au/Ni surface finish must be kept to the minimum controlled in order to prolong the service life of flip-chip packages. |
| Starting Page | 1092 |
| Ending Page | 1097 |
| Page Count | 6 |
| File Format | |
| ISSN | 03615235 |
| Journal | Journal of Electronic Materials |
| Volume Number | 33 |
| Issue Number | 10 |
| e-ISSN | 1543186X |
| Language | English |
| Publisher | Springer-Verlag |
| Publisher Date | 2004-01-01 |
| Publisher Place | New York |
| Access Restriction | One Nation One Subscription (ONOS) |
| Subject Keyword | Flip chip interfacial reaction Au solder Optical and Electronic Materials Characterization and Evaluation of Materials Electronics and Microelectronics, Instrumentation Solid State Physics and Spectroscopy |
| Content Type | Text |
| Resource Type | Article |
| Subject | Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering |
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