NDLI: Electrical and optical properties of lodine doped CdZnTe layers grown by metalorganic vapor phase epitaxy

Content Provider	Springer Nature Link
Author	Yasuda, K. Kojima, K. Mori, K. Kubota, Y. Nimura, T. Inukai, F. Asai, Y.
Copyright Year	1998
Abstract	Electrical and photoluminescence properties of iodine doped CdZnTe (CZT) layers grown by metalorganic vapor phase epitaxy have been studied. Doped layers showed an n-type conductivity from the Zn composition x=0 (CdTe) to 0.07. Above x=0.07, resistivities of doped layers increased steeply up to 10$^{6}$ Ω-cm. Resistivities of doped CZT layers were higher than those of undoped layers above x=0.6. Photoluminescence intensity of doped layers increased compared to undoped layers. Doped CdTe and ZnTe layers showed neutral donor bound exciton emission lines at the exciton related region. Also, these layers showed an increase in emission intensity at the donor acceptor pair recombination bands. Sharp emission lines were observed in doped CZT layers at around 1.49 eV. These emission lines were considered to be originated from GaAs substrates which were optically excited by the intense emission from doped CZT layers.
Starting Page	527
Ending Page	531
Page Count	5
File Format	PDF
ISSN	03615235
Journal	Journal of Electronic Materials
Volume Number	27
Issue Number	6
e-ISSN	1543186X
Language	English
Publisher	Springer-Verlag
Publisher Date	1998-01-01
Publisher Place	New York
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	CdZnTe electrical properties iodine doping metalorganic vapor phase epitaxy (MOVPE) photoluminescence (PL) Optical and Electronic Materials Characterization and Evaluation of Materials Electronics and Microelectronics, Instrumentation Solid State Physics and Spectroscopy
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Growth characteristics of CdZnTe layers grown by metalorganic vapor phase epitaxy using dimethylzinc, dimethylcadmium, diethyltelluride, and dimethyltelluride as precursors

Optical properties and recombination mechanisms in GaN and GaN:Mg grown by metalorganic vapor phase epitaxy

Electrical Properties of Halogen-Doped CdTe Layers on Si Substrates Grown by Metalorganic Vapor-Phase Epitaxy

Growth condition of iodine-doped n$^{+}$-CdTe layers in metal-organic vapor phase epitaxy

Effect of iodine doping on photoluminescence properties of ZnTe grown by metalorganic vapor phase epitaxy

Analysis of reactor geometry and diluent gas flow effects on the metalorganic vapor phase epitaxy of AIN and GaN thin films on α(6H)-SiC substrates

HgCdTe growth on (552) oriented CdZnTe by metalorganic vapor phase epitaxy

GaAs microlens arrays grown by shadow masked MOVPE

A comparison of ethyl iodide and hydrogen chloride for doping ZnSe grown by photoassisted MOVPE

Electrical and optical properties of lodine doped CdZnTe layers grown by metalorganic vapor phase epitaxy

Similar Documents

Growth characteristics of CdZnTe layers grown by metalorganic vapor phase epitaxy using dimethylzinc, dimethylcadmium, diethyltelluride, and dimethyltelluride as precursors

Optical properties and recombination mechanisms in GaN and GaN:Mg grown by metalorganic vapor phase epitaxy

Electrical Properties of Halogen-Doped CdTe Layers on Si Substrates Grown by Metalorganic Vapor-Phase Epitaxy

Growth condition of iodine-doped n$^{+}$-CdTe layers in metal-organic vapor phase epitaxy

Effect of iodine doping on photoluminescence properties of ZnTe grown by metalorganic vapor phase epitaxy

Analysis of reactor geometry and diluent gas flow effects on the metalorganic vapor phase epitaxy of AIN and GaN thin films on α(6H)-SiC substrates

HgCdTe growth on (552) oriented CdZnTe by metalorganic vapor phase epitaxy

GaAs microlens arrays grown by shadow masked MOVPE

A comparison of ethyl iodide and hydrogen chloride for doping ZnSe grown by photoassisted MOVPE

Electrical and optical properties of lodine doped CdZnTe layers grown by metalorganic vapor phase epitaxy