NDLI: ZnSe heteroepitaxy on GaAs (110) substrate

Content Provider	Springer Nature Link
Author	Cho, M. W. Koh, K. W. Bagnall, D. M. Zhu, Z. Yao, T.
Copyright Year	1998
Abstract	ZnSe heteroepitaxial layers have been grown on GaAs (100), (110) on axis, and (110) 6° miscut substrates by molecular beam epitaxy. ZnSe on GaAs (110) shows smooth and featureless spectra from Rutherford backscattering channeling measurements taken along major crystalline directions, whereas ZnSe on GaAs (100) without pre-growth treatments exhibit large interface disorder in channeling spectra. ZnSe films grown on GaAs (110) on axis show facet formation over a wide range of growth conditions. The use of (110) 6° miscut substrates is shown to suppress facet formation; and under the correct growth conditions, facet-free surfaces are achieved. Etch pit density measurements give dislocation densities for ZnSe epitaxial layers grown on GaAs (100), (110) on axis, and (110) 6° miscut substrates of 10$^{7}$/cm$^{2}$, 3 × 10$^{5}$/cm$^{2}$ and 5 × 10$^{4}$/cm$^{2}$, respectively. These results suggest that with further improvements to ZnSe growth on GaAs (110)-off substrates it may be possible to fabricate defect free ZnSe based laser devices.
Starting Page	85
Ending Page	88
Page Count	4
File Format	PDF
ISSN	03615235
Journal	Journal of Electronic Materials
Volume Number	27
Issue Number	2
e-ISSN	1543186X
Language	English
Publisher	Springer-Verlag
Publisher Date	1998-01-01
Publisher Place	New York
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Etch pit density (EPD) GaAs (110) molecular beam epitaxy (MBE) ZnSe Optical and Electronic Materials Characterization and Evaluation of Materials Electronics and Microelectronics, Instrumentation Solid State Physics and Spectroscopy
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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