NDLI: Ex Situ Thermal Cycle Annealing of Molecular Beam Epitaxy Grown HgCdTe/Si Layers

Content Provider	Springer Nature Link
Author	Farrell, S. Brill, G. Chen, Y. Wijewarnasuriya, P. S. Rao, Mulpuri V. Dhar, N. Harris, K.
Copyright Year	2009
Abstract	We present the results of ex situ thermal cycle annealing (TCA) of molecular beam epitaxy grown mercury cadmium telluride (HgCdTe) on Cd(Se)Te/Si(211) composite substrates. We examined the variation in the etch pit density (EPD) and overall crystalline quality with respect to annealing temperature, number of annealing cycles, total annealing time, pre-annealed EPD/crystal quality, buffer layer quality, and buffer layer lattice constant. Using TCA we observed an order of magnitude reduction in the dislocation density of the HgCdTe layers and a corresponding decrease in x-ray full width at half maximum, when the as-grown layer EPD was on the order of 1 × 10$^{7}$ cm$^{−2}$. Among all the parameters studied, the one with the greatest influence on reducing EPD was the number of annealing cycles. We also noticed a saturation point where the HgCdTe/Si EPD did not decrease below ∼1 × 10$^{6}$ cm$^{−2}$, regardless of further TCA treatment or the as-grown EPD value.
Starting Page	43
Ending Page	48
Page Count	6
File Format	PDF
ISSN	03615235
Journal	Journal of Electronic Materials
Volume Number	39
Issue Number	1
e-ISSN	1543186X
Language	English
Publisher	Springer US
Publisher Date	2009-09-29
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Mercury cadmium telluride (HgCdTe) thermal cycle annealing etch pit density (EPD) dislocations molecular beam epitaxy (MBE) silicon (Si) composite substrates Solid State Physics Electronics and Microelectronics, Instrumentation Characterization and Evaluation of Materials Optical and Electronic Materials
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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Ex Situ Thermal Cycle Annealing of Molecular Beam Epitaxy Grown HgCdTe/Si Layers

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