NDLI: Phosphorus implantation into 4H-silicon carbide

Content Provider	Springer Nature Link
Author	Capa, M. A. Santhakumar, R. Venugopal, R. Melloch, M. R. Cooper, J. A.
Copyright Year	2000
Abstract	Sheet resistances in nitrogen- and phosphorus-implanted 4H-SiC are measured to assess the time and temperature dependencies of this variable. In 4H-SiC implanted with 3 × 10$^{15}$ cm$^{−2}$ nitrogen ions to a depth of 2800 Å, the minimum sheet resistance observed is 534 Ω/□. The minimum sheet resistance in 4H-SiC implanted with 4 × 10$^{15}$ cm$^{−2}$ phosphorus ions to a depth of 4000 Å is 51 Ω/□, a record low value for any implanted element into any polytype of SiC. Time-independent sheet resistances are observed following anneals at 1700°C for nitrogen and phosphorus samples. Lower temperature anneals produce sheet resistances which decrease monotonically with increasing time of anneal. Overall, sheet resistances from phosphorus-implanted 4H-SiC are an order of magnitude below those measured from nitrogen implanted samples. The response of phosphorus to low-temperature annealing is significant, and sheet resistances below 500 Ω/□ are achieved at 1200°C. Activation of phosphorus is attempted in an oxidizing atmosphere with and without prior argon annealing. A three-hour gate oxidation in wet O$_{2}$ at 1150°C, followed by a 30 min argon anneal, produced a sheet resistance of 1081 Ω/□. Oxidation after argon annealing caused sheet resistances to increase by about 20% compared to samples subjected solely to argon annealing. It is also found that oxide growth rates are much higher over phosphorus implanted than over unimplanted 4H-SiC. Reasons for the disparity in sheet resistances between nitrogen and phosphorus implants, and for the difference in oxide growth rates are suggested.
Starting Page	210
Ending Page	214
Page Count	5
File Format	PDF
ISSN	03615235
Journal	Journal of Electronic Materials
Volume Number	29
Issue Number	2
e-ISSN	1543186X
Language	English
Publisher	Springer-Verlag
Publisher Date	2000-01-01
Publisher Place	New York
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	4H-SiC phosphorous implantation sheet resistance Optical and Electronic Materials Characterization and Evaluation of Materials Electronics and Microelectronics, Instrumentation Solid State Physics and Spectroscopy
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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