NDLI: Hot-implantation of nitrogen donors into p- type α-SiC and characterization of n$^{+}$-p junction

Content Provider	Springer Nature Link
Author	Iue, N. Itoh, A. Kimoto, T. Matsunami, H. Nakata, T. Iue, M.
Copyright Year	1997
Abstract	N$^{+}$ implantation into p-type a-SiC (6H-SiC, 4H-SiC) epilayers at elevated temperatures was investigated and compared with implantation at room temperature (RT). When the implant dose exceeded 4 × 10$_{15}$ cm$_{−2}$, a complete amorphous layer was formed in RT implantation and severe damage remained even after post implantation annealing at 1500°C. By employing hot implantation at 500~800°C, the formation of a complete amorphous layer was suppressed and the residual damage after annealing was significantly reduced. For implant doses higher than 10$^{15}$ cm$^{−2}$, the sheet resistance of implanted layers was much reduced by hot implantation. The lowest sheet resistance of 542Ω/ was obtained by implantation at 500 ~ 800°C with a 4 × 10$^{15}$ cm$^{−2}$ dose. Characterization of n$^{+}$-p junctions fabricated by N$^{+}$ implantation into p-type epilayers was carried out in detail. The net doping concentration in the region close to the junction showed a linearly graded profile. The forward current was clearly divided into two components of diffusion and recombination. A high breakdown voltage of 615 ∼ 810V, that is almost an ideal value, was obtained, even if the implant dose exceeded 10$^{15}$ cm$^{−2}$. By employing hot implantation at 800°C, the reverse leakage current was significantly reduced.
Starting Page	165
Ending Page	171
Page Count	7
File Format	PDF
ISSN	03615235
Journal	Journal of Electronic Materials
Volume Number	26
Issue Number	3
e-ISSN	1543186X
Language	English
Publisher	Springer-Verlag
Publisher Date	1997-01-01
Publisher Place	New York
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Hot-implantation n$^{+}$-p junction Reverse leakage current Sheet resistance Silicon carbide Optical and Electronic Materials Characterization and Evaluation of Materials Electronics and Microelectronics, Instrumentation Solid State Physics and Spectroscopy
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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