NDLI: Metal-Organic Chemical Vapor Deposition of Hg$_{1−x }$Cd$_{ x }$Te Fully Doped Heterostructures Without Postgrowth Anneal for Uncooled MWIR and LWIR Detectors

Content Provider	Springer Nature Link
Author	Piotrowski, Adam Kłos, Krzysztof
Copyright Year	2007
Abstract	Uncertainty in precursor pulse delays and shapes has been found to be an important factor in Hg$_{1−x }$Cd$_{ x }$Te metal-organic chemical vapor deposition (MOCVD) growth using the interdiffused multilayer process (IMP). Herein, metal-organic concentration changes in the growth zone are examined using an in␣situ infrared (IR) absorption gas monitoring system, and modifications to the interdiffused multilayer process are applied for in␣situ control of stoichiometry, improved morphology, minimized process length, and consumption of precursors. Dimethylcadmium (DMCd) introduction during IMP flush stages in HgTe was used for stoichiometry control. The final stage of heterostructure formation was optimized to prevent Hg outdiffusion. As a result, vacancy concentration was reduced far below the equilibrium level at the growth conditions so the background of n-type doping was revealed. Acceptor doping with arsine (AsH$_{3}$) and trisdimethylaminoarsenic (TDMAAs) was examined over a wide range of compositions, and doping levels of 5 × 10$^{15}$ cm$^{−3}$ to 5 × 10$^{17}$ cm$^{−3}$ were obtained. The presence of both arsenic dopants significantly increased the CdTe growth rate. This caused an increase of Cd mole fraction in the grown material. Doped heterostructures can be grown without any postgrowth anneal and used for mid- and long-wavelength infrared (MWIR and LWIR) devices operating at near-ambient temperatures.
Starting Page	1052
Ending Page	1058
Page Count	7
File Format	PDF
ISSN	03615235
Journal	Journal of Electronic Materials
Volume Number	36
Issue Number	8
e-ISSN	1543186X
Language	English
Publisher	Springer US
Publisher Date	2007-07-07
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	HgCdTe MOCVD IMP MWIR LWIR IR detectors Solid State Physics and Spectroscopy Electronics and Microelectronics, Instrumentation Characterization and Evaluation of Materials Optical and Electronic Materials
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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