NDLI: Control and growth of middle wave infrared (MWIR) Hg$_{(1−x)}$Cd$

Content Provider	Springer Nature Link
Author	Vilela, M. F. Buell, A. A. Newton, M. D. Venzor, G. M. Childs, A. C. Peterson, J. M. Franklin, J. J. Bornfreund, R. E. Radford, W. A. Johnson, S. M.
Copyright Year	2005
Abstract	Middle wave infrared (MWIR) HgCdTe p-on-n double-layer heterojunctions (DLHJs) for infrared detector applications have been grown on 100-mm Si (112) substrates by molecular beam epitaxy (MBE) for large format 2,560×512 focal plane arrays (FPAs). In order to meet the performance requirements needed for these FPAs, cutoff and doping uniformity across the 100-mm wafer are crucial. Reflection high-energy electron diffraction (RHEED), secondary ion mass spectrometry (SIMS), Fourier transform infrared spectrometry (FTIR), x-ray, and etch pit density (EPD) were monitored to assess the reproducibility, uniformity, and quality of detector material grown. Material properties demonstrated include x-ray full width half maximum (FWHM) as low as 64 arc-sec, typical etch pit densities in mid-10$^{6}$ cm$^{−2}$, cutoff uniformity below 5% across the full wafer, and typical density of macrodefects <1000 cm$^{−2}$. The detector quality was established by using test structure arrays (TSAs), which include miniarray diodes with the similar pitch as the detector array for easy measurement of critical parameters such as diode I-V characteristics and detector quantum efficiency. Typical I-V curves show excellent R$_{0}$A products and strong reverse breakdown characteristics. Detector quantum efficiency was measured to be in the 60–70% range without an antireflection coating.
Starting Page	898
Ending Page	904
Page Count	7
File Format	PDF
ISSN	03615235
Journal	Journal of Electronic Materials
Volume Number	34
Issue Number	6
e-ISSN	1543186X
Language	English
Publisher	Springer-Verlag
Publisher Date	2005-01-01
Publisher Place	New York
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Middle wave infrared (MWIR) HgCdTe HgCdTe/Si molecular beam epitaxy (MBE) infrared photodiodes large-format focal plane arrays (FPAs) Optical and Electronic Materials Characterization and Evaluation of Materials Electronics and Microelectronics, Instrumentation Solid State Physics and Spectroscopy
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Fabrication of high-performance large-format MWIR focal plane arrays from MBE-grown HgCdTe on 4″ silicon substrates

MBE growth of HgCdTe on silicon substrates for large format MWIR focal plane arrays

Molecular-beam epitaxial growth of HgCdTe infrared focal-plane arrays on silicon substrates for midwave infrared applications

High-Performance MWIR/LWIR Dual-Band 640 × 480 HgCdTe/Si FPAs

Recent developments of high-complexity HgCdTe focal plane arrays at leti infrared laboratory

MBE growth of HgCdTe on silicon substrates for large-area infrared focal plane arrays: A review of recent progress

Performance of molecular-beam epitaxy-grown midwave infrared HgCdTe detectors on four-inch Si substrates and the impact of defects

Status of the MBE technology at leti LIR for the manufacturing of HgCdTe focal plane arrays

High-Performance M/LWIR Dual-Band HgCdTe/Si Focal-Plane Arrays

Control and growth of middle wave infrared (MWIR) Hg$_{(1−x)}$Cd$_{x}$Te on Si by molecular beam epitaxy

Similar Documents

Fabrication of high-performance large-format MWIR focal plane arrays from MBE-grown HgCdTe on 4″ silicon substrates

MBE growth of HgCdTe on silicon substrates for large format MWIR focal plane arrays

Molecular-beam epitaxial growth of HgCdTe infrared focal-plane arrays on silicon substrates for midwave infrared applications

High-Performance MWIR/LWIR Dual-Band 640 × 480 HgCdTe/Si FPAs

Recent developments of high-complexity HgCdTe focal plane arrays at leti infrared laboratory

MBE growth of HgCdTe on silicon substrates for large-area infrared focal plane arrays: A review of recent progress

Performance of molecular-beam epitaxy-grown midwave infrared HgCdTe detectors on four-inch Si substrates and the impact of defects

Status of the MBE technology at leti LIR for the manufacturing of HgCdTe focal plane arrays

High-Performance M/LWIR Dual-Band HgCdTe/Si Focal-Plane Arrays

Control and growth of middle wave infrared (MWIR) Hg$_{(1−x)}$Cd$_{x}$Te on Si by molecular beam epitaxy