NDLI: Temperature-Dependent Studies of Si-Implanted Al$_{0.33}$Ga$_{0.67}$N with Different Annealing Temperatures and Times

Content Provider	Springer Nature Link
Author	Moore, E.A. Yeo, Y.K. Gruen, G.J. Ryu, Mee Yi Hengehold, R.L.
Copyright Year	2009
Abstract	Electrical activation studies were carried out on Si-implanted Al$_{0.33}$Ga$_{0.67}$N as a function of ion dose, annealing temperature, and annealing time. The samples were implanted at room temperature with Si ions at 200 keV in doses ranging from 1 × 10$^{14}$ cm$^{−2}$ to 1 × 10$^{15}$ cm$^{−2}$, and subsequently proximity-cap annealed from 1150°C to 1350°C for 20 min to 60 min in a nitrogen environment. One hundred percent electrical activation efficiency was obtained for Al$_{0.33}$Ga$_{0.67}$N samples implanted with a dose of 1 × 10$^{15}$ cm$^{−2}$ after annealing at either 1200°C for 40 min or at 1300°C for 20 min. The samples implanted with doses of 1 × 10$^{14}$ cm$^{−2}$ and 5 × 10$^{14}$ cm$^{−2}$ exhibited significant activations of 74% and 90% after annealing for 20 min at 1300°C and 1350°C, respectively. The mobility increased as the annealing temperature increased from 1150°C to 1350°C, showing peak mobilities of 80 cm$^{2}$/V s, 64 cm$^{2}$/V s, and 61 cm$^{2}$/V s for doses of 1 × 10$^{14}$ cm$^{−2}$, 5 × 10$^{14}$ cm$^{−2}$, and 1 × 10$^{15}$ cm$^{−2}$, respectively. Temperature-dependent Hall-effect measurements showed that most of the implanted layers were degenerately doped. Cathodoluminescence measurements for all samples exhibited a sharp neutral donor-bound exciton peak at 4.08 eV, indicating excellent recovery of damage caused by ion implantation.
Starting Page	21
Ending Page	28
Page Count	8
File Format	PDF
ISSN	03615235
Journal	Journal of Electronic Materials
Volume Number	39
Issue Number	1
e-ISSN	1543186X
Language	English
Publisher	Springer US
Publisher Date	2009-09-26
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	AlGaN Hall-effect measurements implantation electrical activation mobility cathodoluminescence Solid State Physics Electronics and Microelectronics, Instrumentation Characterization and Evaluation of Materials Optical and Electronic Materials
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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