NDLI: Fabrication and characterization of 4H-SiC P-N junction diodes by selective-epitaxial growth using TaC as the mask

Content Provider	Springer Nature Link
Author	Li, C. Losee, P. Seiler, J. Bhat, I. Chow, T. P.
Copyright Year	2005
Abstract	Selective nitrogen doping of 4H-SiC by epitaxial growth using TaC as the high-temperature mask has been demonstrated. Nomarski optical microscopy and scanning electron microscopy (SEM) were used to characterize selective growth of SiC. In addition, 250-µm, square-shaped, p-n junction diodes by selective n-type epitaxial growth on a p-type epilayer were fabricated. The refilled fingers with different width were designed to vary the periphery/area (P/A) ratio. The effects of P/A ratio on the current-voltage (J-V) characteristics have been investigated. The ideality factor extracted from J-V characteristics is ≈2 at a temperature range of 25–275°C, which indicates that the Shockley-Read-Hall recombination is the dominant mechanism in the conduction region. The reverse leakage current does not show dependence on P/A ratio for trench-refilled diodes. The room-temperature reverse leakage-current density at 100 V is less than 3.5×10$^{−7}$ A/cm$^{2}$ for all diodes. Also, the reverse leakage current does not increase significantly with temperature up to 275°C. The breakdown voltages measured at room temperature are about 450 V and 400 V for diodes without and with fingers, respectively.
Starting Page	450
Ending Page	456
Page Count	7
File Format	PDF
ISSN	03615235
Journal	Journal of Electronic Materials
Volume Number	34
Issue Number	4
e-ISSN	1543186X
Language	English
Publisher	Springer-Verlag
Publisher Date	2005-01-01
Publisher Place	New York
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	4H-SiC selective-epitaxial growth junction diodes chemical-vapor deposition Optical and Electronic Materials Characterization and Evaluation of Materials Electronics and Microelectronics, Instrumentation Solid State Physics and Spectroscopy
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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