NDLI: Structural Properties of Boron-Doped Germanium-Tin Alloys Grown by Molecular Beam Epitaxy

Content Provider	Springer Nature Link
Author	Bhargava, Nupur Gupta, Jay Prakash Adam, Thomas Kolodzey, James
Copyright Year	2014
Abstract	Boron-doped Ge$_{1−x }$Sn$_{ x }$ alloys with atomic fractions of tin up to x = 0.08 were grown on n-Ge(001) substrates using solid-source molecular beam epitaxy, in order to study their structural properties. The total boron concentration in the alloys was ~ 10$^{18}$ cm$^{−3}$ as measured by secondary-ion mass spectroscopy, which also indicated low amounts of impurities such as carbon and oxygen. More than 90% of the Sn atoms occupied substitutional lattice sites in the alloy as determined by Rutherford backscattering spectrometry. High-resolution x-ray diffraction showed that the boron-doped Ge$_{1−x }$Sn$_{ x }$ alloys were single crystals that were completely strained with low defect densities and coherent interfaces for thickness up to 90 nm, and for Sn composition of 8%. The boron-doped Ge$_{1−x }$Sn$_{ x }$/n-Ge formed p–n junctions with conventional rectifying characteristics, indicating that the boron produced electrically active acceptor states.
Starting Page	931
Ending Page	937
Page Count	7
File Format	PDF
ISSN	03615235
Journal	Journal of Electronic Materials
Volume Number	43
Issue Number	4
e-ISSN	1543186X
Language	English
Publisher	Springer US
Publisher Date	2014-03-13
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Germanium-tin alloys boron doping MBE Optical and Electronic Materials Characterization and Evaluation of Materials Electronics and Microelectronics, Instrumentation Solid State Physics
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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