NDLI: Effects of Boron Doping on the Properties of Ultrananocrystalline Diamond Films

Content Provider	Springer Nature Link
Author	Yuan, Wen Xiang WU, Q. X. Luo, Z. K. Wu, H. S.
Copyright Year	2014
Abstract	Boron-doped ultrananocrystalline diamond (UNCD) films were fabricated on silicon substrates by microwave plasma chemical vapor deposition. UNCD films containing different concentrations of boron were prepared by using trimethylboron (B(CH$_{3}$)$_{3}$, TMB) as boron doping source and varying the amount of boron in the gas mixture from 0 ppm to 1000 ppm. The effects of boron doping on morphology, lattice parameter, phase composition, crystal size, and residual stress of UNCD films were investigated. No obvious change of the morphology was observed on doping with boron, and all the films had the UNCD crystal grains. Boron doping enhanced (111) growth. The preferred growth direction of the UNCD films was $$ \langle 110 \rangle $$ . Residual tensile stress was present in all the films, and increased with increasing the amount of boron in the gas mixture.
Starting Page	1302
Ending Page	1306
Page Count	5
File Format	PDF
ISSN	03615235
Journal	Journal of Electronic Materials
Volume Number	43
Issue Number	4
e-ISSN	1543186X
Language	English
Publisher	Springer US
Publisher Date	2014-02-21
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Diamond films boron doping chemical vapor deposition ultrananocrystalline diamond Optical and Electronic Materials Characterization and Evaluation of Materials Electronics and Microelectronics, Instrumentation Solid State Physics
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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