NDLI: Evaluation of Alternative Atomistic Models for the Incipient Growth of ZnO by Atomic Layer Deposition

Content Provider	Springer Nature Link
Author	Chu, Manh Hung Tian, Liang Chaker, Ahmad Skopin, Evgenii Cantelli, Valentina Ouled, Toufik Boichot, Raphaël Crisci, Alexandre Lay, Sabine Richard, Marie Ingrid Thomas, Olivier Deschanvres, Jean Luc Renevier, Hubert Fong, Dillon Ciatto, Gianluca
Copyright Year	2017
Abstract	ZnO thin films are interesting for applications in several technological fields, including optoelectronics and renewable energies. Nanodevice applications require controlled synthesis of ZnO structures at nanometer scale, which can be achieved via atomic layer deposition (ALD). However, the mechanisms governing the initial stages of ALD had not been addressed until very recently. Investigations into the initial nucleation and growth as well as the atomic structure of the heterointerface are crucial to optimize the ALD process and understand the structure–property relationships for ZnO. We have used a complementary suite of in situ synchrotron x-ray techniques to investigate both the structural and chemical evolution during ZnO growth by ALD on two different substrates, i.e., SiO$_{2}$ and Al$_{2}$O$_{3}$, which led us to formulate an atomistic model of the incipient growth of ZnO. The model relies on the formation of nanoscale islands of different size and aspect ratio and consequent disorder induced in the Zn neighbors’ distribution. However, endorsement of our model requires testing and discussion of possible alternative models which could account for the experimental results. In this work, we review, test, and rule out several alternative models; the results confirm our view of the atomistic mechanisms at play, which influence the overall microstructure and resulting properties of the final thin film.
Starting Page	3512
Ending Page	3517
Page Count	6
File Format	PDF
ISSN	03615235
Journal	Journal of Electronic Materials
Volume Number	46
Issue Number	6
e-ISSN	1543186X
Language	English
Publisher	Springer US
Publisher Date	2017-03-20
Publisher Place	New York
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	ZnO synchrotron radiation in situ ALD XANES simulations Optical and Electronic Materials Characterization and Evaluation of Materials Electronics and Microelectronics, Instrumentation Solid State Physics
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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