NDLI: Low-dislocation relaxed SiGe grown on an effective compliant substrate

Content Provider	Springer Nature Link
Author	Luo, Y. H. Liu, J. L. Jin, G. Wang, K. L. Moore, C. D. Goorsky, M. S. Chih, C. Tu, K. N.
Copyright Year	2000
Abstract	An effective compliant substrate was successfully fabricated for growth of high quality relaxed SiGe templates. The compliant substrate was fabricated by synthesizing a 20% B$_{2}$O$_{3}$ concentration borosilicate glass in the silicon on insulator wafers through boron and oxygen implantation followed by high temperature annealing. Substrates with 5%, 10% and 20% B$_{2}$O$_{3}$ were used for 150 nm Si$_{0.75}$Ge$_{0.25}$ epitaxy. Double-axis x-ray diffraction measurements determined the relaxation and composition of the Si$_{1−x}$Ge$_{x}$ layers. Cross-sectional transmission electron microscopy was used to observe the lattice of the SiGe epilayer and the Si substrate, dislocation density and distribution. Raman spectros-copy was combined with step etching to measure the samples. For 20% BSG sample, the strain in the thin Si layer was calculated from the Raman shift and it matched the results from DAXRD very well. The density of threading dislocation on the surface of 500 nm Si$_{0.75}$Ge$_{0.25}$ layers was 2×10$^{4}$ cm$^{−2}$ for the sample on the 20% borosilicate glass substrate. This method is promising to prepare effective compliant substrate for low-dislocation relaxed SiGe growth.
Starting Page	950
Ending Page	955
Page Count	6
File Format	PDF
ISSN	03615235
Journal	Journal of Electronic Materials
Volume Number	29
Issue Number	7
e-ISSN	1543186X
Language	English
Publisher	Springer-Verlag
Publisher Date	2000-01-01
Publisher Place	New York
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Compliant substrate relaxed SiGe MBE Optical and Electronic Materials Characterization and Evaluation of Materials Electronics and Microelectronics, Instrumentation Solid State Physics and Spectroscopy
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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