NDLI: Orientation-Dependent Properties of CoFe$_{2}$O$_{4}$-Bi$_{3.15}$Nd$_{0.85}$Ti$_{3}$O$_{12}$ Bilayer Multiferroic Films Prepared by a Sol

Content Provider	Springer Nature Link
Author	Zhang, Fuwei Yang, Feng Dong, Cuifang Liu, Xiaotong Nan, Huilin Wang, Yingying Zong, Zhihao Tang, Minghua
Copyright Year	2015
Abstract	Lead-free bilayer multiferroic films of CoFe$_{2}$O$_{4}$ (CFO) and oriented Bi$_{3.15}$Nd$_{0.85}$Ti$_{3}$O$_{12}$ (BNT) were deposited on a conventional Pt(111)/Ti/SiO$_{2}$/Si(100) substrate by use of a sol–gel method. BNT layers with different preferred orientations were grown by use of different spinning and annealing processes. The ferroelectric, ferromagnetic, and magnetoelectric (ME) properties of the CFO–BNT bilayer thin films were investigated at room temperature. a-Axis-oriented bilayer films had larger ME voltage coefficients and larger converse ME response than c-axis-oriented films. This study shows that the orientation of the BNT layer has a stress-mediated interfacial effect which can substantially affect the magnetoelectric coupling behavior of the bilayer structures.
Starting Page	2348
Ending Page	2352
Page Count	5
File Format	PDF
ISSN	03615235
Journal	Journal of Electronic Materials
Volume Number	44
Issue Number	7
e-ISSN	1543186X
Language	English
Publisher	Springer US
Publisher Date	2015-03-06
Publisher Place	New York
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	CoFe$_{2}$O$_{4}$-Bi$_{3.15}$Nd$_{0.85}$Ti$_{3}$O$_{12}$ multiferroic bilayer films orientation sol–gel method Optical and Electronic Materials Characterization and Evaluation of Materials Electronics and Microelectronics, Instrumentation Solid State Physics
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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Preparation and electrical properties of Nd and Mn co-doped Bi$_{4}$Ti$_{3}$O$_{12}$ thin films

DC conduction behavior of Bi$_{3.15}$Nd$_{0.85}$Ti$_{3}$O$_{12}$ thin films grown by RF-magnetron sputtering

Improvement of nucleation and electrical properties of Bi$_{3.15}$Nd$_{0.85}$Ti$_{2.99}$Mn$_{0.01}$O$_{12}$ thin films with an upper Bi$_{4}$Ti$_{3}$O$_{12}$ buffer layer

Effect of annealing temperature on multiferroic properties of Bi$_{0.85}$Nd$_{0.15}$FeO$_{3}$ thin films prepared by sol-gel method

Effects of Bi$_{2}$O$_{3}$, TiO$_{2}$, and Bi$_{4}$Ti$_{3}$O$_{12}$ Seeding Layers on the Structural and Electrical Properties of Bi$_{3.25}$La$_{0.75}$Ti$_{3}$O$_{12}$ Thin Films Grown by a Sol–Gel Method

Effect of La doping on microstructure and ferroelectric properties of Bi$_{4}$Ti$_{3}$O$_{12}$ thin films prepared by sol-gel method

Improved ferroelectric and leakage properties of Bi$_{3.15}$Nd$_{0.85}$Ti$_{3}$O$_{12}$/BiFeO$_{3}$ heterojunction thin films formed through sol–gel method

Orientation-Dependent Properties of CoFe$_{2}$O$_{4}$-Bi$_{3.15}$Nd$_{0.85}$Ti$_{3}$O$_{12}$ Bilayer Multiferroic Films Prepared by a Sol–Gel Method

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