NDLI: Breakdown Voltage Enhancement of AlGaN/GaN High-Electron-Mobility Transistors via Selective-Area Growth for Ohmic Contacts over Ion Implantation

Content Provider	Springer Nature Link
Author	Pang, Liang Seo, Hui Chan Chapman, Patrick Adesida, Ilesanmi Kim, Kyekyoon Kevin
Copyright Year	2010
Abstract	Selective-area growth (SAG) based on plasma-assisted molecular-beam epitaxy (PAMBE) was shown to facilitate improvement of Ohmic contacts and direct-current (DC) characteristics for GaN-based field-effect transistors (FETs) over the widely accepted ion-implantation technique. Twofold improvements in breakdown voltage were also demonstrated for samples grown on both sapphire and silicon substrates. An AlGaN/GaN high-electron-mobility transistor (HEMT) fabricated with PAMBE-SAG exhibited a low specific contact resistivity of 5.86 × 10$^{−7}$ Ω cm$^{2}$, peak drain current of 420 mA/mm, and high breakdown voltage of 77 V. These results demonstrate that PAMBE-SAG is suited to fabricating HEMTs for high-power applications.
Starting Page	499
Ending Page	503
Page Count	5
File Format	PDF
ISSN	03615235
Journal	Journal of Electronic Materials
Volume Number	39
Issue Number	5
e-ISSN	1543186X
Language	English
Publisher	Springer US
Publisher Date	2010-03-09
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Gallium nitride Ohmic contact breakdown voltage selective-area growth plasma-assisted molecular-beam epitaxy Solid State Physics Electronics and Microelectronics, Instrumentation Characterization and Evaluation of Materials Optical and Electronic Materials
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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Formation of Low-Resistance Ohmic Contact by Damage-Proof Selective-Area Growth of Single-Crystal n $^{+}$-GaN Using Plasma-Assisted Molecular Beam Epitaxy

Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation annealing temperature

Schottky-Contact Technology in InAlN/GaN HEMTs for Breakdown Voltage Improvement

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Thermal Storage of AlGaN/GaN High-Electron-Mobility Transistors

AlGaN Channel HEMT With Extremely High Breakdown Voltage

Electron Transport Mechanism for Ohmic Contact to GaN/AlGaN/GaN Heterostructure Field-Effect Transistors

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Breakdown Voltage Enhancement of AlGaN/GaN High-Electron-Mobility Transistors via Selective-Area Growth for Ohmic Contacts over Ion Implantation

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