NDLI: Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation annealing temperature

Content Provider	IEEE Xplore Digital Library
Author	Recht, F. McCarthy, L. Rajan, S. Chakraborty, A. Poblenz, C. Corrion, A. Speck, J.S. Mishra, U.K.
Copyright Year	1980
Abstract	This letter reports AlGaN/GaN high-electron mobility transistors with capless activation annealing of implanted Si for nonalloyed ohmic contacts. Source and drain areas were implanted with an Si dose of 1/spl times/10/sup 16/ cm/sup -2/ and were activated at /spl sim/1260/spl deg/C in a metal-organic chemical vapor deposition system in ammonia and nitrogen at atmospheric pressure. Nonalloyed ohmic contacts to ion-implanted devices showed a contact resistance of 0.96 /spl Omega//spl middot/mm to the channel. An output power density of 5 W/mm was measured at 4 GHz, with 58% power-added efficiency and a gain of 11.7 dB at a drain bias of 30 V.
Sponsorship	IEEE Electron Devices Society
Starting Page	205
Ending Page	207
Page Count	3
File Size	158691
File Format	PDF
ISSN	07413106
Volume Number	27
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-04-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Ohmic contacts Aluminum gallium nitride Gallium nitride HEMTs MODFETs Ion implantation Annealing Temperature Chemical vapor deposition Nitrogen molecular beam epitaxy (MBE) Aluminum compounds gallium compounds high-electron mobility transistors (HEMTs) ion implantation modulation-doped field-effect transistors (MODFETs)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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