NDLI: Characteristics of heteroepitaxial structures Al$_{ x }$Ga$_{1–x }$N for p–i

Content Provider	Springer Nature Link
Author	Smirv, D. V. Boltar, K. O. Sednev, M. V. Sharov, Yu. P.
Copyright Year	2016
Abstract	Mesaelements of the focal plane array (FPA) of p–i–n diodes based on Al$_{ x }$Ga$_{1–x }$N for p–i–n heteroepitaxial structures (HESs) grown by the molecular-beam epitaxy and hydride epitaxy methods with the use of metalorganic compounds are formed. Elements of 320 × 256 FPAs with a pitch of 30 μm are separated by means of ion-beam etching through a photoresist mask in the argon ion stream produced by the Kaufmann ion source in a vacuum plant. To determine the required etching depth, contact profilometry and ultraviolet spectrophotometry methods allowing one to determine positions of the n-layer and sufficient etching depth of the sample are used. The thickness accuracy of the HES functional layers stated in manufacturer’s certificates does not exceed 28%. Rates of ion-beam etching of Al$_{ x }$Ga$_{1–x }$N for p–i–n layers with different compositions are determined.
Starting Page	358
Ending Page	362
Page Count	5
File Format	PDF
ISSN	10642269
Journal	Journal of Communications Technology and Electronics
Volume Number	61
Issue Number	3
e-ISSN	15556557
Language	English
Publisher	Pleiades Publishing
Publisher Date	2016-04-05
Publisher Place	Moscow
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Al$_{ x }$Ga$_{1–x }$N for p–i–n GaN heteroepitaxial structures p–i–n diode ion-beam etching visible-blind subband solar-blind subband absorption (transmission) edge Communications Engineering, Networks
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering Radiation

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Solar-blind Al$_{ x }$Ga$_{1–x }$N (x > 0.45) p–i–n photodiodes with a polarization-p-doped emitter

High Performance Solar-Blind Ultraviolet (320 times 256) Focal Plane Arrays Based on Al_xGa_1-xN

Projected Efficiency of Polarization-Matched p-In$_{bm x}$ Ga$_{bm {1-x}}$N/i-In $_{bm y}$Ga$_{bm{1-y}}$N/n-GaN Double Heterojunction Solar Cells

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Design of a resonant-cavity-enhanced p-i-n GaN/Al/sub x/Ga/sub 1-x/N ultraviolet photodetector

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Temperature dependent transport properties in GaN, Al/sub x/Ga/sub 1-x/N, and In/sub x/Ga/sub 1-x/N semiconductors

Characteristics of heteroepitaxial structures Al$_{ x }$Ga$_{1–x }$N for p–i–n diode focal plane arrays

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