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Simulation of Nonpolar p-GaN / iIn x Ga 1 − x N / nGaN Solar Cells
| Content Provider | Semantic Scholar |
|---|---|
| Author | Jeng, Ming-Jer |
| Copyright Year | 2014 |
| Abstract | It is well known that nitride-based devices suffer the polarization effects. A promising way to overcome the polarization effects is growth in a direction perpendicular to the c-axis (nonpolar direction). Nonpolar devices do not suffer polarization charge, and then they have a chance to achieve the high solar efficiency. The understanding of the solar performance of non-polar InGaNbased solar cells will be interesting. For a pin non-polar solar cell with GaN pand n-cladding layers, the conduction band offset (or barrier height, ΔE) between an intrinsic layer and n-GaN layer is an important issue correlating to the efficiency and fill factor. The efficiency and fill factor will be seriously degraded due to sufficiently high barrier height. To reduce a high barrier height, some graded layers with an energy bandgap between the energy bandgap of n-GaN and InxGa1−xN intrinsic layer can be inserted to the interface of n-GaN and InxGa1−xN layers. From simulation, it indicates that the insertion of graded layer is an effective method to lower energy barrier when there exists a high energy band offset in non-polar nitride devices. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://downloads.hindawi.com/journals/ijp/2012/910256.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
